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MHW2821-1 Datasheet

Part Number MHW2821-1
Manufacturers Motorola
Logo Motorola
Description UHF Silicon FET Power Amplifier
Datasheet MHW2821-1 DatasheetMHW2821-1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW2821/D The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 Volt Characteristics: RF Input Power: ≤ 250 mW (MHW2821–1) RF Input Power: ≤ 300 mW (MHW2821–2) RF Output Power: 20 W (MHW2821–1) RF Output Power: 18 W (MHW2821–2) • LDMOS FET Technology • Epoxy Glass Substrate Eliminates Possibility .

  MHW2821-1   MHW2821-1






Part Number MHW2821-2
Manufacturers Motorola
Logo Motorola
Description UHF Silicon FET Power Amplifier
Datasheet MHW2821-1 DatasheetMHW2821-2 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW2821/D The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 Volt Characteristics: RF Input Power: ≤ 250 mW (MHW2821–1) RF Input Power: ≤ 300 mW (MHW2821–2) RF Output Power: 20 W (MHW2821–1) RF Output Power: 18 W (MHW2821–2) • LDMOS FET Technology • Epoxy Glass Substrate Eliminates Possibility .

  MHW2821-1   MHW2821-1







UHF Silicon FET Power Amplifier

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW2821/D The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 Volt Characteristics: RF Input Power: ≤ 250 mW (MHW2821–1) RF Input Power: ≤ 300 mW (MHW2821–2) RF Output Power: 20 W (MHW2821–1) RF Output Power: 18 W (MHW2821–2) • LDMOS FET Technology • Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture • 50 Ω Input/Output Impedance • Guaranteed Stability and Ruggedness • Cost Effective MHW2821-1 MHW2821-2 –1: 20 W, 806 – 870 MHz –2: 18 W, 890 – 950 MHz RF POWER AMPLIFIER CASE 301AB–02, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25°C) Rating DC Supply Voltages RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Symbol Vbias, VS2, VS3 Pin Pout TC Tstg Value 12.5 16 400 23 – 30 to +100 – 30 to +100 Unit Vdc mW W °C °C ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc; Vbias = 12.5 Vdc; TC = + 25°C, 50 Ω system, unless otherwise noted) Characteristic Frequency Range Input Power (Pout = 20 W) (1) Input Power (Pout = 18 W) (1) Power Gain (Pout = 20 W) (1) Power Gain (Pout = 18 W) (1) Efficiency (Rated Pout) Harmonics (Rated Pout Reference) (1) Input VSWR (Rated Pout) (1) (1) Adjust Pin for specified Pout. MHW2821–1 MHW2821–2 MHW2821–1 MHW2821–2 MHW2821–1 MHW2821–2 Symbol BW Pin GP η 2fo 3fo VSWRin Min 806 890 — — 19 17.9 35.


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