MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW5122A/D
450 MHz CATV Amplifier
. . . desi...
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW5122A/D
450 MHz CATV Amplifier
. . . designed for broadband applications requiring low distortion characteristics. Specified for use as a CATV trunk–line amplifier. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. Specified for 53– and 60–Channel Performance Broadband Power Gain — @ f = 40– 450 MHz Gp = 12.5 dB (Typ) Broadband Power Gain — @ f = 40– 450 MHz Gp = 12.5 dB (Typ) Broadband Noise Figure — @ f = 450 MHz NF = 7.0 dB (Typ) Superior Gain, Return Loss and DC Current Stability with Temperature
MHW5122A
12.5 dB GAIN 450 MHz 60–CHANNEL CATV TRUNK AMPLIFIER
CASE 714–06, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Rating RF
Voltage Input (Single Tone) DC Supply
Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value + 70 + 28 – 20 to +100 – 40 to +100 Unit dBmV Vdc °C °C
ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = + 30°C, 75 W system unless otherwise noted)
Characteristic Frequency Range Power Gain — 50 MHz Slope Gain Flatness (Peak To Valley) Return Loss — Input/Output (Zo = 75 Ohms) Second Order Intermodulation Distortion (Vout = + 46 dBmV per ch., Ch 2, M6, M15) (Vout = + 46 dBmV per ch., Ch 2, M13, M22) Cross Modulation Distortion (Vout = + 46 dBmV per ch.) Composite Triple Beat (Vout = + 46 dBmV per ch.) DIN (European Applications Only)* 300 MHz — (CH V + Q – P @ W) 400 MHz — (CH M8 + M15 –...