MHW803

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW803/D The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). MHW803–2 806 – 870 MHz Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl = 4 V) = 33 dB Harmonics = – 45 dBc Max @ 2 fo 50 Ω Input/Output Impedance Guaranteed Stability and Ruggedness Epoxy Glass PCB Construction Gives Consistent Performance and Reliability Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MHW803-2 2 W, 806 to 905 MHz UHF POWER AMPLIFIERS CASE 301E–04, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25°C) Rating DC Supply Voltage (Pins 2,3,4) DC Control Voltage (Pin 1) RF Input Power RF Output Power (Vs1 = Vs2 = Vs3 = 10 V) Operating Case Temperature Range Storage Temperature Range Symbol Vs1,2,3 VCont Pin Pout TC Tstg Value 10 4 3 3 – 30 to +100 – 30 to +100 Unit Vdc Vdc mW W °C °C ELECTRICAL CHARACTERISTICS Vs1 = Vs2 = Vs3 = 7.5 Vdc, (Pins 2,3,4), TC = 25°C, 50 W System Characteristic Frequency Range Control Voltage (Pout = 2 W, Pin = 1 mW) (1) Quiescent Current (Vs1, Pin 2 = 7.5 Vdc) (2) Power Gain (Pout = 2 W, VCont = 4 Vdc) Efficiency (Pout = 2 W, Pin = 1 mW) (1) Harmonics (Pout = 2 W) (1) (Pin = 1 mW) 2 fo 3 fo Symbol — VCont Is1(q) Gp Min 806 0 — 33 37 — — — — Max 870 4 65 — — – 45 – 55 2.0:1 – 85 – 82 No Degradat...