SIDE LOOK PACKAGE NPN PHOTODETECTOR
Description
The MID-11H22 is a NPN silicon phototransistor mounted in a lensed , spe...
SIDE LOOK PACKAGE NPN PHOTODETECTOR
Description
The MID-11H22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic and side looking package.
4.45±0.12 (.175±.005) 2.22 (.087)
1.22±0.07 (.048±.003)
MID-11H22
Package Dimensions
Unit: mm ( inches )
0.76 (.030)
5.72±0.12 (.225±.005)
1.55±0.12 (.061±.005)
Features
l
Wide range of collector current Lensed for high sensitivity Low cost plastic package Good spectral matching to IRED (λp >800 nm) type.
1.00 MIN. (.040)
12.70 MIN. (.500)
l
0.50 TYP. (.020)
l
l
2.54 (.100)
E
C
Notes : 1. Tolerance for excess molding compound is ± 0.005". 2. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC Parameter Power Dissipation Collector-Emitter
Voltage Emitter-Collector
Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 30 5 -55 C to +100 C -55oC to +100oC 260 C for 5 seconds
o o o
Unit mW V V
Unity Opto Technology Co., Ltd.
04/04/2002
MID-11A22
Optical-Electrical Characteristics
@ TA=25oC Parameter Collector-Emitter Breakdown
Voltage Emitter-Collector Breakdown
Voltage Collector-Emitter Saturation
Voltage Rise Time Fall Time Collector Dark Current On State Collector Current
Tr Tf Rise and Fall Time - µS Iceo-Collector Dark Current -µA
Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA Ee=0 Ic=0.5 mA Ee=0.1mW/cm2 VR =30V , 0=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V Ee=0.1mW/cm2
Symbol V(BR)CEO V(BR)ECO VCE(SAT) Tr Tf ...