MIG75J201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J201H
High Power Switching Applications Motor C...
MIG75J201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J201H
High Power Switching Applications Motor Control Applications
l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-
voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 2.5 V (Max) toff = 3.0 µs (Max) trr = 0.30 µs (Max)
l Package dimensions : TOSHIBA 2-110A1A l Weight : 520 g
Equivalent Circuit
1
2001-05-29
MIG75J201H
Maximum Ratings (Tj = 25°C )
Stage Characteristic Supply
voltage Collector-emitter
voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply
voltage Collector-emitter
voltage Collector current Brake Reverse
voltage Forward current Collector power dissipation Junction temperature Control supply
voltage Control Input
voltage Fault output
voltage Fault output current Operating temperature Module Storage temperature range Isolation
voltage Screw torque AC 1 minute M5 Condition P-N power terminal ― Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ― P-N power terminal ― Tc = 25°C, DC ― Tc = 25°C, DC Tc = 25°C ― VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current ― ― Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO TC Tstg VISO ― Ratings 450 600 75 75 195 150 450 600 30 600 30 80 150 20 20 20 14 −20 ~ +100 −40 ~ +125 2500 3 Unit V V A A W °C V V A V A W °C V V V mA °C °C V Nm
Ele...