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MIG75Q7CSB1X

Toshiba Semiconductor

High Power Switching Applications Motor Control Applications

MIG50Q7CSB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q7CSB1X (1200V/50A 7in1) High Power Switching...


Toshiba Semiconductor

MIG75Q7CSB1X

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Description
MIG50Q7CSB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q7CSB1X (1200V/50A 7in1) High Power Switching Applications Motor Control Applications · · · · · Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. The electrodes are isolated from case. VCE (sat) = 2.2 V (typ.) UL recognized File No. E87989 Weight: 278 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) IN (B) V 3. 10. 17. IN (U) FO (W) IN (X) U 4. 11. 18. GND (U) IN (W) IN (Y) B 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 1 2002-02-27 MIG50Q7CSB1X Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2 2002-02-27 ...




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