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MIO1200-33E10 Datasheet

Part Number MIO1200-33E10
Manufacturers IXYS
Logo IXYS
Description IGBT Module
Datasheet MIO1200-33E10 DatasheetMIO1200-33E10 Datasheet (PDF)

MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. = 3.1 V CC C C' G E' EE E phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ‘ IC = 1.

  MIO1200-33E10   MIO1200-33E10






Part Number MIO1200-33E11
Manufacturers IXYS
Logo IXYS
Description IGBT Module
Datasheet MIO1200-33E10 DatasheetMIO1200-33E11 Datasheet (PDF)

Advanced Technical Information MIO 1200-33E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. = 3.1 V CC C C' 5 7 9 3 G 2 E' 1 EE E 46 8 phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless other.

  MIO1200-33E10   MIO1200-33E10







IGBT Module

MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. = 3.1 V CC C C' G E' EE E phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ‘ IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 3.1 V 3.8 V VGE(th) IC = 240 mA; VCE = VGE 6 8V ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 120 mA 500 nA td(on) tr td(off) t f Eon Eoff Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1800 V; IC = 1200 A; RG = 1.5 Ω; Lσ = 100 nH 400 200 1070 440 1890 1950 ns ns ns ns mJ mJ Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz Qge IC = 1200 A; VCE = 1800 V; VGE = ± 15 V RthJC ‘ Collector emitter saturation voltage is given at chip level 187 nF 11.6 nF 2.2 nF 12.1 µC 0.0085 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Features • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications • AC power converters for - industrial drives - windmills - traction • LASER pu.


2015-10-30 : MIO1200-25E10    MIO1500-25E10    MIO1200-33E10    MIO1200-33E11    MIO600-65E11    MKI75-06A7    MKI75-06A7T    MKI50-12F7    MKI100-12F8    MKI75-12E8   


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