MIO 600-65E11
IGBT Module Single switch
Short Circuit SOA Capability Square RBSOA
IC80 = 600 A VCES = 6500 V VCE(sat) ...
MIO 600-65E11
IGBT Module Single switch
Short Circuit SOA Capability Square RBSOA
IC80 = 600 A VCES = 6500 V VCE(sat) typ = 4.2 V
CC
C
C' 5 7 9
3
G
2
E' 1 EE E
46
8
phase-out
IGBT
Symbol VCES VGES IC85 ICM t
SC
Conditions VGE = 0 V
TC = 85°C
tp = 1 ms; TC = 85°C
V= CC
4400
V;
VCEM CHIP
=
<
6500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 600 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
4.2 V 5.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6 8V
ICES VCE = 6500 V; VGE = 0 V; TVJ = 125°C
120 mA
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
500 nA
t d(on)
tr td(off) tf Eon
Eoff
Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 3600 V;
IC = 600 A; Lσ = 280 nH
RG = 3.9 Ω RG = 3.9 Ω RG = 2.7 Ω RG = 2.7 Ω RG = 3.9 Ω RG = 2.7 Ω
620 270 1500 930 4250 3250
ns ns ns ns mJ mJ
Cies Coes Cres
VCE = 25 V; VGE = 0 V; f = 1 MHz
Qge IC = 600 A; VCE = 3600 V; VGE = ± 15 V
RthJC
Collector emitter saturation
voltage is given at chip level
150 7.57 1.46
nF nF nF
9.65
µC
0.011 K/W
Features
NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC
Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance
Typical Applications
AC power converters for - industrial drives - windmills - traction
LASER pulse generator
IXYS reserves the ri...
