MJ11022

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V (Min.) ·High DC Current Gain- : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage- : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 250 VCEO Collector-Emitter Voltage 250 VEBO Emitter-Base Voltage 5 IC Collector Current-Continunous 15 ICM Collector Current-Peak 30 IB Base Current-Continunous 0.5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 175 Tstg Storage Temperature Range -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.86 ℃/W MJ11022 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 0.15A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Curren...