isc Silicon NPN Power Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)—MJ13100 =...
isc Silicon NPN Power Transistors
DESCRIPTION · Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 400V(Min)—MJ13100 = 450V(Min)—MJ13101
·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
MJ13100
650
VCEV
Collector-Emitter
Voltage
V
MJ13101
750
MJ13100
400
VCEO(SUS) Collector-Emitter
Voltage
V
MJ13101
450
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
15
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.0
UNIT ℃/W
MJ13100/13101
isc website:www.iscsemi.com
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isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining
Voltage
MJ13100 MJ13101
IC=50mA ; IB=0
VCE(sat)-1
Collector-Emitter Saturation
Voltage
IC= 15A; IB= 3A IC= 15A; IB= 3A;TC=100℃
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 20A; IB= 4A
VBE(sat) ICBO
Base-Emitter Saturation
Voltage
Collector Cutoff Current
MJ13100 MJ13101
...