MJ13101

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13100 = 450V(Min)—MJ13101 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT MJ13100 650 VCEV Collector-Emitter Voltage V MJ13101 750 MJ13100 400 VCEO(SUS) Collector-Emitter Voltage V MJ13101 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJ13100/13101 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage MJ13100 MJ13101 IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A IC= 15A; IB= 3A;TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 4A VBE(sat) ICBO Base-Emitter Saturation Voltage Collector Cutoff Current MJ13100 MJ13101 ...