MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
*Preferred Devices
High−Current Complementary Silicon Power Transistors
D...
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
*Preferred Devices
High−Current Complementary Silicon Power Transistors
Designed for use in high−power amplifier and switching circuit applications.
Features
High Current Capability − IC Continuous = 60 Amperes DC Current Gain − hFE = 15−100 @ IC = 50 Adc Low Collector−Emitter Saturation
Voltage −VCE(sat) = 2.5 Vdc (Max)
@ IC = 50 Adc
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage
MJ14001 VCEO MJ14002/03
60
Vdc
80
Collector−Base
Voltage
MJ14001 VCBO MJ14002/03
60
Vdc
80
Emitter−Base
Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C
VEBO IC IB IE PD
5.0
Vdc
60
Adc
15
Adc
75
Adc
300
W
1.71
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
http://onsemi.com
60 AMPERE COMPLEMENTARY SILICON
POWER TRANSISTORS 60−80 VOLTS, 300 WATTS
MARKING DIAGRAM
MJ1400xG AYYWW MEX
TO−204 (TO−3) CASE 197A STYLE 1
MJ1400x = Device Code
xx = 1, 2, or 3
G
= Pb−Free Packa...