MJ14003

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features High Current Capability − IC Continuous = 60 Amperes DC Current Gain − hFE = 15−100 @ IC = 50 Adc Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage MJ14001 VCEO MJ14002/03 60 Vdc 80 Collector−Base Voltage MJ14001 VCBO MJ14002/03 60 Vdc 80 Emitter−Base Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VEBO IC IB IE PD 5.0 Vdc 60 Adc 15 Adc 75 Adc 300 W 1.71 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. http://onsemi.com 60 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 300 WATTS MARKING DIAGRAM MJ1400xG AYYWW MEX TO−204 (TO−3) CASE 197A STYLE 1 MJ1400x = Device Code xx = 1, 2, or 3 G = Pb−Free Packa...