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MJ15001 Datasheet

Part Number MJ15001
Manufacturers ON
Logo ON
Description Complementary Silicon Power Transistors
Datasheet MJ15001 DatasheetMJ15001 Datasheet (PDF)

MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuou.

  MJ15001   MJ15001






Part Number MJ15001
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet MJ15001 DatasheetMJ15001 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ15001 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type MJ15002 ·Wide area of safe operation APPLICATIONS ·For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB IE PD Ti Tstg PARAMETER Collector-base voltage C.

  MJ15001   MJ15001







Part Number MJ15001
Manufacturers Motorola
Logo Motorola
Description 15 AMPERE POWER TRANSISTORS
Datasheet MJ15001 DatasheetMJ15001 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15001/D Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100% Tested) — 200 W @ 40 V 50 W @ 100 V • For Low Distortion Complementary Designs • High DC Current Gain — hFE = 25 (Min) @ IC = 4 Adc MJ15001 PNP MJ15002 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 20.

  MJ15001   MJ15001







Part Number MJ15001
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJ15001 DatasheetMJ15001 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain ·Wide Area of Safe Operation ·Complement to the PNP MJ15002 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Vol.

  MJ15001   MJ15001







Complementary Silicon Power Transistors

MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB IE PD 140 Vdc 140 Vdc 5 Vdc 15 Adc 5 Adc 20 Adc 200 W 1.14 W/°C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +200 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/16″ from Case for v 10 secs Symbol RqJC TL Max 0.875 265 Unit °C/W °C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013.


2005-05-07 : MJ11021    MJ11021    MJ11021    MJ11022    MJ11022    MJ11028    MJ11028    MJ11028    MJ11029    MJ11029   


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