MJ15001 (NPN), MJ15002 (PNP)
Complementary Silicon Power Transistors
The MJ15001 and MJ15002 are power transistors desi...
MJ15001 (NPN), MJ15002 (PNP)
Complementary Silicon Power Transistors
The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications.
Features
High Safe Operating Area For Low Distortion Complementary Designs High DC Current Gain These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage Collector−Base
Voltage Emitter−Base
Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCEO VCBO VEBO
IC IB IE PD
140 Vdc 140 Vdc
5 Vdc 15 Adc 5 Adc 20 Adc 200 W 1.14 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg –65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/16″ from Case for v 10 secs
Symbol RqJC TL
Max 0.875 265
Unit °C/W
°C
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013...
