www.DataSheet4U.com
MJ15011 (NPN), MJ15012 (PNP)
Preferred Devices
Complementary Silicon Power Transistors
The MJ15011...
www.DataSheet4U.com
MJ15011 (NPN), MJ15012 (PNP)
Preferred Devices
Complementary Silicon Power Transistors
The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters.
http://onsemi.com
High Safe Operating Area (100% Tested)
1.2 A @ 100 V
Completely Characterized for Linear Operation High DC Current Gain and Low Saturation
Voltage
hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A For Low Distortion Complementary Designs Pb−Free Packages are Available*
10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS
MAXIMUM RATINGS
Rating Collector−Emitter
Voltage Collector−Emitter
Voltage Emitter−Base
Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Emitter Current − Continuous − Peak (Note 1) Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCEX VEB IC ICM IB IBM IE IEM PD TJ, Tstg Value 250 250 5 10 15 2 5 12 20 200 1.14 – 65 to + 200 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/_C _C
TO−204AA (TO−3) CASE 1−07 STYLE 1
MARKING DIAGRAM
MJ1501xG AYYWW MEX
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes Symbol RθJC TL Max 0.875 265 Unit _C/W _C
MJ1501x = D...