2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
Complementary Silicon High-Power Transistors
These PowerBase complementa...
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
Complementary Silicon High-Power Transistors
These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055.
Features
High Current−Gain − Bandwidth Safe Operating Area These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage 2N3055AG MJ15015G, MJ15016G
VCEO
Vdc
60
120
Collector−Base
Voltage 2N3055AG MJ15015G, MJ15016G
VCBO
Vdc
100
200
Collector−Emitter
Voltage Base Reversed Biased
2N3055AG MJ15015G, MJ15016G
VCEV
Vdc
100 200
Emitter−Base
Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ TC = 25_C 2N3055AG MJ15015G, MJ15016G Derate above 25_C 2N3055AG MJ15015G, MJ15016G
VEBO
7.0
Vdc
IC
15
Adc
IB
7.0
Adc
PD
115
W
180
W
0.65
W/_C
1.03
W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055...
