MJ15016G

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features High Current−Gain − Bandwidth Safe Operating Area These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO 60 120 Vdc Collector−Base Voltage 2N3055AG MJ15015G, MJ15016G VCBO 100 200 Vdc Collector−Emitter Voltage Base Reversed Biased 2N3055AG MJ15015G, MJ15016G VCEV 100 200 Vdc Emitter−Base Voltage Collector Current − Continuous Base Current Total Device Dissipation @ TC = 25_C 2N3055AG MJ15015G, MJ15016G Derate above 25_C 2N3055AG MJ15015G, MJ15016G VEBO IC IB PD 7.0 15 7.0 115 180 Vdc Adc Adc W W 0.65 W/_C 1.03 W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055A) THERMAL CHAR...