MJ15023

MJ15023 (PNP), MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. Features High Safe Operating Area High DC Current Gain Complementary to MJ15022 (NPN), MJ15024 (NPN) These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage MJ15023 MJ15025 Symbol VCEO Value 200 250 Unit Vdc Collector−Base Voltage MJ15023 MJ15025 VCBO Vdc 350 400 Emitter−Base Voltage Collector−Emitter Voltage Collector Current − Continuous (Note 1) Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C VEBO VCEX IC ICM IB PD 5 Vdc 400 Vdc 16 Adc 30 Adc 5 Adc 250 W 1.43 W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 0.70 Unit _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semicondu...