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MJ3001

ST Microelectronics

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

MJ2501 ® MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEME...


ST Microelectronics

MJ3001

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Description
MJ2501 ® MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES APPLICATION )s AUDIO POWER AMPLIFIER t(ss DC-AC CONVERTER cs EASY DRIVER FOR LOW VOLTAGE uDC MOTOR ds GENERAL POWER SWITCHING Pro t(s)DESCRIPTION te cThe MJ2501 is a Silicon Epitaxial-Base PNP le upower transistors in monolithic Darlington dconfiguration, mounted in Jedec TO-3 metal so rocase. It is intented for use in power linear and b Pswitching applications. ) - O leteThe complementary NPN type is the MJ3001. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM bsolete PPrroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS O teSymbol Parameter ObsoleVCBO Collector-base Voltage (IE = 0) R1 Typ. = 10 KΩ R2 Typ. = 150 Ω PNP NPN Value MJ2501 MJ3001 80 Unit V VCEO Collector-emitter Voltage (IB = 0) 80 V VEBO Emitter-base Voltage (IC = 0) 5V IC Collector Current 10 A IB Base Current 0.2 A Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 150 -65 to 200 200 W oC oC For PNP types voltage and current values are negative. September 2003 1/4 MJ2501 / MJ3001 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.17 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off Current (RBE = 1 KΩ) VCE = 80 V T case = 150 oC VCE = 80 V 1 mA 5 mA ICEO Collector Cut-off VCE = 30 V 1...




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