SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package www.datashee...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package www.datasheet4u.com ·High
voltage APPLICATIONS ·Designed for medium-to-high
voltage Inverters,converters,regulators and switching circuits PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPTION
MJ423
Fig.1 simplified outline (TO-3) and symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 400 325 5 10 2 125 -65~150 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
www.datasheet4u.com
MJ423
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining
voltage
IC=0.1A ;IB=0
325
V
VCE(sat) VBE(sat) ICEX
Collector-emitter saturation
voltage
IC=1A; IB=0.1A
0.8
V
Base-emitter saturation
voltage
IC=1A; IB=0.1A VCE=400V; VEB(Off)=1.5V TC=125 VEB=5V; IC=0
1.25 0.25 0.5 5.0
V
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
30
90
hFE-2
DC current gain
IC=2.5A ; VCE=5V
10
fT
Transition frequency
IC=0.2A ; V...