MCC
)HDWXUHV
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omponents 21201 Itasca Street Chatsworth !"# $
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MCC
)HDWXUHV
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MJ413 MJ423 MJ431
High Collector-Emitter
Voltage VCES=400V DC Current Gain Specified 3.5A High Frequency Response to 2.5 MHz
10 Amp NPN Silicon Power Transistors 125W
TO-3
E A N C
0D[LPXP5DWLQJV
Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance: 1.0 /W junction to case
:
Characteristic Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current-Continuous Base Current
Symbol VCEX VCB VEB IC
Max 400 400 5.0 10 2.0 125 1.0
Unit Vdc Vdc
U
D
K
Vdc Adc Adc Watts W/
H
V 2 1
L
G
B
Total Device Dissipation @TC=25 Derate above 25
:
:
IB PD
:
Q
PIN 1. PIN 2. CASE. BASE EMITTER COLLECTOR
Figure 1 - Power Derating Curve PD – Power Dissipation(W)
DIMENSIONS INCHES DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MM MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE
∅
150 50 100 Temperature °C Power Dissipation (W) - Versus - Temperature °C 0
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MJ413, MJ423 & MJ431
MCC
Symbol
VCEO(sus) ICEX 0.25 2.5 0.5 5.0 IEBO 5.0 2.0 hFE 20 15 30 10 15 10 VCE(sat) 0.6 0.8 0.7 VBE(sat) 1.25 1.25 1.50 fT MHz 2.5 Vdc 80 90 35 Vdc mAdc
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