INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION · Collector-Emitter Sust...
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION · Collector-Emitter Sustaining
Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-
voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB
B
MJ8503
PARAMETER Collector-Emitter
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature
VALUE 1400 800 8 5 10 4 8 150 200 -65~200
UNIT V V V A A A A W ℃ ℃
IBM PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.16 UNIT ℃/W
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE COB PARAMETER Collector-Emitter Sustaining
Voltage Collector-Emitter Saturation
Voltage Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Collector Cutoff Current Collector Cutoff ...