isc Silicon NPN Power Transistor
MJB3055
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltag.
NPN Transistor
isc Silicon NPN Power Transistor
MJB3055
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
75
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
fT
Cur.