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MJB42C Datasheet

Part Number MJB42C
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet MJB42C DatasheetMJB42C Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP42 series ·Pb-free package are available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 .

  MJB42C   MJB42C






Part Number MJB42C
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Silicon Plastic Power Transistors
Datasheet MJB42C DatasheetMJB42C Datasheet (PDF)

MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically the Same as TIP41 and T1P42 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitt.

  MJB42C   MJB42C







Silicon PNP Power Transistor

isc Silicon PNP Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP42 series ·Pb-free package are available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse -10 A IB Base Current PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 2 W 65 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJB42C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=-6A; IB= -600mA IC=- 6A; VCE=-4V VCE=-60V; IE= 0 IEBO Emitter Cutoff Current VEB=-5V; IC= 0 hFE1* hFE2* DC Current Gain DC Current Gain IC= -0.3A; VCE= -4 V IC=- 3A; VCE= -4 V fT Current-Gain—Bandwidth Product *:Pulse test PW≤300us,duty cycle≤2% IC= -0.5A; VCE= -10V MJB42C MIN TYP MAX UNIT -100 V -1.5 V -2.0 V -0.7 .


2016-11-11 : TLR344FVJ    TLR344FJ    TLR344F    TLR342FVJ    TLR342FVT    TLR342FJ    LM4559FVJ    LM4559FVM    LM4559FVT    LM4559FJ   


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