isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector-Emitter saturation voltage ·Pb-free package are available ·...
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector-Emitter saturation
voltage ·Pb-free package are available ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose amplification and switching such as
out or driver stages in applications such as switching regulators,converters and power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO Collector-Emitter
Voltage
-80
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICP
Collector Current-Pulse
PC
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-20
A
2
W
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
MJB45H11
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
MJB45H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC=- 30mA; IB= 0
VCE(sat) VBE(sat)
ICEO
Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Collector Cutoff Current
IC=-8A; IB=- 400mA IC=-8A; IB= -800mA VCE= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= -2A; VCE=-1V IC=-4A; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -10V
COB
Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
MIN
TYP MAX UNIT
-80
V
...
