MJB5742T4G

MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com These Devices are Pb−Free and are RoHS Compliant Applications Small Engine Ignition Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) Symbol VCEO(sus) VCEV VEB IC ICM IB IBM PD PD TJ, Tstg Value 400 800 8 8 16 2.5 5 2 0.016 100 0.8 −65 to +150 Unit Vdc Vdc Vdc Adc Adc W W/_C W W/_C _C D2PAK CASE 418B STYLE 1 B5742G AYWW EMITTER 3 COLLECTOR 2,4 BASE 1 ≈ 100 ≈ 50 Total Device Dissipation @ TA = 25_C Derate above 25°C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds Symbol RqJC RqJA TL Max 1.25 62.5 275 Unit _C/W _C/W _C B5742 A Y WW G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended O...