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MJD112L Datasheet

Part Number MJD112L
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet MJD112L DatasheetMJD112L Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power .

  MJD112L   MJD112L






Part Number MJD112T4
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Complementary power Darlington transistors
Datasheet MJD112L DatasheetMJD112T4 Datasheet (PDF)

MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device sum.

  MJD112L   MJD112L







Part Number MJD112
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Darlington Power Transistor
Datasheet MJD112L DatasheetMJD112 Datasheet (PDF)

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series • NJV Prefix for Automotive and Ot.

  MJD112L   MJD112L







Part Number MJD112
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Complementary power Darlington transistor
Datasheet MJD112L DatasheetMJD112 Datasheet (PDF)

MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device sum.

  MJD112L   MJD112L







Part Number MJD112
Manufacturers MCC
Logo MCC
Description NPN Transistor
Datasheet MJD112L DatasheetMJD112 Datasheet (PDF)

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 • High DC Current Gain • Built-in a damper diode at E-C • Maximum Thermal Resistance: 125oC/W Junction to Ambient Maximum Ratings @ 25OC U.

  MJD112L   MJD112L







EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.3 20 150 -55 150 UNIT V V V A mA W C B Q A C K H F F 1 2 3 1. BASE 2. COLLECTOR 3. EMITTER E B D M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1 1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10 0.95 MAX DPAK Q A C H G F F 123 K E B D I J DIM MILLIMETERS A 6.60+_ 0.2 B 6.10+_ 0.2 C 5.0+_ 0.2 P D 1.10+_ 0.2 E 9.50+_ 0.6 F 2.30+_ 0.1 G 0.76+_ 0.1 H 1.0 MAX I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1 P 1.0 +_0.1 Q 0.90 MAX R1 = 10kΩ R2 = 0.6kΩ E 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current VCEO(SUS) ICEO ICBO IEBO DC Current Gain.


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