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MJD127 Datasheet

Part Number MJD127
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Darlington Power Transistor
Datasheet MJD127 DatasheetMJD127 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Coll.

  MJD127   MJD127






Part Number MJD127
Manufacturers GME
Logo GME
Description Epitaxial Planar PNP Transistor
Datasheet MJD127 DatasheetMJD127 Datasheet (PDF)

Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Curren.

  MJD127   MJD127







Part Number MJD127
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Complementary power Darlington transistors
Datasheet MJD127 DatasheetMJD127 Datasheet (PDF)

MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1. Internal schematic diagrams Tab.

  MJD127   MJD127







Part Number MJD127
Manufacturers Fairchild
Logo Fairchild
Description PNP Transistor
Datasheet MJD127 DatasheetMJD127 Datasheet (PDF)

MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127 Complement to MJD122 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emit.

  MJD127   MJD127







Part Number MJD127
Manufacturers MCC
Logo MCC
Description Silicon PNP epitaxial planer Transistors
Datasheet MJD127 DatasheetMJD127 Datasheet (PDF)

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD127 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 • High DC Current Gain • Electrically similar to popular TIP 127 • Built-in a damper diode at E-C • Maximum Thermal Resistance: 83.3oC/W J.

  MJD127   MJD127







Part Number MJD127
Manufacturers ON
Logo ON
Description Complementary Darlington Power Transistors
Datasheet MJD127 DatasheetMJD127 Datasheet (PDF)

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0.

  MJD127   MJD127







Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 PC PC Rth j-a Total Power Dissipation @ Ta=25℃ Collector Power Dissipation TC=25℃ Thermal Resistance,Junction to Ambient 1.75 20 71.4 TJ Junction Temperature 150 A W W ℃/W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(ON) Base-Emitter voltage ICEO Collector Cutoff Current IC=-4A; IB= -16mA IC=-8A; IB= -80mA IC=-8A; IB= -80mA IC= -4A; VCE= -4V VCE=-50V; IE= 0 IEBO Emitter Cutoff Current VEB=-5V; IC= 0 hFE1 DC Current Gain hFE2 .


2016-11-08 : MC7805    MC7805AC    MC7815AE    MC7818AE    MC7824AE    MC7812    MC7812E    MJ10012T    MJB45H11    MJD112   


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