MJD29

MJD29/29C MJD29/29C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJD29 : MJD29C VCEO Collector-Emitter Voltage : MJD29 : MJD29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 1 3 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : MJD29 : MJD29C Collector Cut-off Current : MJD29 : MJD29C ICES Collector Cut-off Current : MJD29 : MJD29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4A, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz µA µA mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 µA µA Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V ICEO * Pulse Test: PW ...