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MJD29C Datasheet

Part Number MJD29C
Manufacturers Fairchild
Logo Fairchild
Description General Purpose Amplifier
Datasheet MJD29C DatasheetMJD29C Datasheet (PDF)

MJD29/29C MJD29/29C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJD29 : MJD29C VCEO Collector-Emitter Voltage : MJD29 : MJD29C Emitter-Base Voltage Colle.

  MJD29C   MJD29C






Part Number MJD2955
Manufacturers JCST
Logo JCST
Description PNP Transistor
Datasheet MJD29C DatasheetMJD2955 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD2955 TRANSISTOR (PNP) FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 y DC Current Gain Specified to10 Amperes MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Co.

  MJD29C   MJD29C







Part Number MJD2955
Manufacturers TAITRON
Logo TAITRON
Description SMD Power Transistor
Datasheet MJD29C DatasheetMJD2955 Datasheet (PDF)

SMD Power Transistor (PNP) MJD2955 SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD2955 Marking Code MJD2955 VCEO Collector-Emitter Voltage 60 VCBO VEBO Collector-Base Voltage Emitter-.

  MJD29C   MJD29C







Part Number MJD2955
Manufacturers GME
Logo GME
Description Epitaxial Planar NPN Transistor
Datasheet MJD29C DatasheetMJD2955 Datasheet (PDF)

Production specification Epitaxial Planar PNP Transistor FEATURES  Lead formed for surface mount Pb applications. Lead-free  Straight lead.  Electrically similar to popular MJE2955T.  DC current gain specified to 10A. APPLICATIONS  Low speed switching applications.  D-PAK for surface mount applications. MJD2955 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -70 V VCE.

  MJD29C   MJD29C







Part Number MJD2955
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet MJD29C DatasheetMJD2955 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-.

  MJD29C   MJD29C







General Purpose Amplifier

MJD29/29C MJD29/29C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJD29 : MJD29C VCEO Collector-Emitter Voltage : MJD29 : MJD29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 1 3 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : MJD29 : MJD29C Collector Cut-off Current : MJD29 : MJD29C ICES Collector Cut-off Current : MJD29 : MJD29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4A, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz µA µA mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 µA µA Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V ICEO * Pulse Test: PW .


2005-05-07 : MJ11021    MJ11021    MJ11021    MJ11022    MJ11022    MJ11028    MJ11028    MJ11028    MJ11029    MJ11029   


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