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MJD31C TRANSISTORS Datasheet PDFSILICON POWER TRANSISTORS SILICON POWER TRANSISTORS |
| Part Number | MJD31C |
|---|---|
| Description | SILICON POWER TRANSISTORS |
| Feature | MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD31/D
Complem entary Power Transistors
• • • MJD31,C* PNP MJD32,C* *Motorola Pref erred Device NPN DPAK For Surface Mou nt Applications Designed for general pu rpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves ( No Suffix) Straight Lead Version in Pla stic Sleeves (“–1” Suffix) Lead F ormed Version in 16 mm Tape and Reel ( T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ Î . |
| Manufacture | Motorola |
| Datasheet |
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| Part Number | MJD31C |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistors
DESCR IPTION ·DC Current Gain -hFE = 25(Min) @ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min) ·Compl ement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lo t variations for robust device performa nce
and reliable operation
APPLICATION S ·Designed for use in general purpose amplifier and low speed switching appl ications. ABSOLUTE MAXIMUM RATINGS(Ta=2 5℃) SYMBOL PARAMETER VALUE UNIT V CBO VCEO VEBO IC ICM IB PC Tj Collecto r-Base Voltage Collector-Emitter Voltag e Emitter-Base Voltage Collector Curren t-Continuous Collector . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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| Part Number | MJD31C |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Feature | MJD31/31C — NPN Epitaxial Silicon Tran sistor
MJD31/31C NPN Epitaxial Silicon Transistor
Features
• General Purpos e Amplifier • Low Speed Switching App lications • Load Formed for Surface M ount Application (No Suffix) • Straig ht Lead (I-PAK, “- I” Suffix) • E lectrically Similar to Popular TIP31 an d TIP31C February 2012 1 D-PAK 1 I-PA K 1. Base 2. Collector 3. Emitter Absolut e Maximum Ratings Ta = 25°C unless oth erwise noted Symbol Parameter VCBO Collector-Base Voltage : MJD31 : MJD31C VCEO Collector-Emitter Voltage : MJD 31 : MJD31C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector . |
| Manufacture | Fairchild |
| Datasheet |
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