MJD45H11A

MJD45H11A 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD45H series Low collector emitter saturation voltage Fast switching speeds AEC-Q101 qualified 3. Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = -1 V; IC = -2 A; Tamb = 25 °C Min Typ Max Unit - - -80 V --60 - -8 A -16 A - Nexperia MJD45H11A 80 V, 8 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector 2 13 DPAK (SOT428) Graphic symbol E B C; mb aaa-029523 6. Ordering information Table 3. Ordering information Type number Package Name MJD45H11A DPAK Description Version plastic, single-ended surface-mounted package (DPAK); 3 leads; SOT428 2.285 mm pitch; 6 mm x 6.6 mm...