MJE13001

UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-x-AB3-A-R SOT-89 - MJE13001G-x-AB3-F-R SOT-89 MJE13001L-x-T92-B MJE13001G-x-T92-B TO-92 MJE13001L-x-T92-K MJE13001G-x-T92-K TO-92 MJE13001L-x-T92-A-B MJE13001G-x-T92-A-B TO-92 MJE13001L-x-T92-A-K MJE13001G-x-T92-A-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 123 ECB BCE BCE BCE ECB ECB Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk  MARKING SOT-89 TO-92 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-055.I MJE13001 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage Collector-Base Voltage VCEO 400 V VCBO 600 V Emitter Base Voltage Collector Current VEBO IC 7V 200 mA Collector Power Dissipation SOT-89 TO-92 PC 550 750 mW Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Ba...