MJE13002-E

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.  FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MJE13002L-E-x-T6S-K MJE13002G-E-x-T6S-K TO-126S MJE13002L-E-x-T92-B MJE13002G-E-x-T92-B TO-92 MJE13002L-E-x-T92-K MJE13002G-E-x-T92-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 123 BCE BCE BCE Packing Bulk Tape Box Bulk  MARKING TO-126S TO-92 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 Ver.A MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Base Current Continuous Peak (1) Emitter Current Continuous Peak (1) TA=25°C TO-92 TO-126S Derate TO-92 Total Power Dissipation above 25°C TO-126S TC=25°C TO-92 TO-126S Derate TO-92 above 25°C TO-126S Junction Temp...