MJE13003D-P

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.  FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode  INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B TO-92 MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 123 ECB ECB Packing Tape Box Bulk www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R201-085.d MJE13003D-P  MARKING Preliminary NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R201-085.d MJE13003D-P Preliminary NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter Voltage (VBE =0) VCES 700 V Collector-Emitter Voltage (IB =0) VCEO 400 V Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS) VEBO 9 V Collector Current IC 1.5 A Collector Peak Current (tP<5ms) ICM 3A Base Current IB 0.75 A Base Peak Current (tP<5ms) IBM 1.5 A Power Dissipation TA=25°C TC=25°C PD 1...