MJE13007A

MJE13007A SILICON NPN SWITCHING TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS s MOTOR CONTROL s DESCRIPTION The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are inteded for use in motor control, switching regulators etc. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM IE I EM P tot T stg Tj June 1997 Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Emitter Current Emitter Peak Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 850 400 9 8 16 4 8 12 24 80 -65 to 150 150 Unit V V V A A A A A A W o o C C 1/4 MJE13007A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1A 2A 1A 400 1 1.5 3 2 1.2 1.6 1.5 8 6 f = 1 MHz f = 0.1 MHz 4 110 40 30 MHz pF T c = 100 C o Min. Typ. Max. 1 5 1 Unit mA mA mA V V V V V V V V V CEO(sus) ∗ Collector-Emitter Sustaining ...