MJE15030

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high−frequency drivers in audio amplifiers. Features High Current Gain − Bandwidth Product TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCEO 120 150 Vdc Collector−Base Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCB Vdc 120 150 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25°C VEB 5.0 Vdc IC 8.0 Adc ICM 16 Adc IB 2.0 Adc PD 50 W 0.40 W/_C Total Device Dissipation @ TA = 25_C Derate above 25°C PD 2.0 W 0.016 W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 2.5 62.5 Unit _C/W _C/W http://onsemi.com 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS PNP COLLECTOR 2,4 NPN COLLECTOR 2,4 1 BASE 1 BASE 3 EMITTER 4 3 EMITTER TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM MJE150x...