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MJE18004G Datasheet

Part Number MJE18004G
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJE18004G DatasheetMJE18004G Datasheet (PDF)

isc Silicon NPN Power Transistor MJE18004G DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switch mode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitt.

  MJE18004G   MJE18004G






Part Number MJE18004D2
Manufacturers Motorola
Logo Motorola
Description POWER TRANSISTORS
Datasheet MJE18004G DatasheetMJE18004D2 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need.

  MJE18004G   MJE18004G







Part Number MJE18004
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJE18004G DatasheetMJE18004 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V I.

  MJE18004G   MJE18004G







Part Number MJE18004
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet MJE18004G DatasheetMJE18004 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJE18004 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector c.

  MJE18004G   MJE18004G







Part Number MJE18004
Manufacturers ON
Logo ON
Description Switch-mode NPN Bipolar Power Transistor
Datasheet MJE18004G DatasheetMJE18004 Datasheet (PDF)

MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state−of−the−art die designed for use in 220 V line−operated switch−mode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive Requirements: ♦ High and Flat DC Current Gain hFE ♦ Fast Switching ♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail) • Full Characterization at 125_C • ON Semicon.

  MJE18004G   MJE18004G







NPN Transistor

isc Silicon NPN Power Transistor MJE18004G DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switch mode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PD Total Power Dissipation@TC=25℃ 75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.65 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE18004G ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.1A TC=125℃ IC= 2A ;IB= 0.4 A TC=125℃ VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A VBE(sat)-1 Base-Emitter .


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