isc Silicon NPN Power Transistor
MJE3055AT
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min) ·High DC Current Gain-
: hFE= 150-260@IC= 1A ·Bandwidth Product-
: fT = 2MHz(Min)@IC = 500 mA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and s...
