MJE5730

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch−mode power supply drivers and other switching applications. Features Popular TO−220 Plastic Package PNP Complements to the TIP47 thru TIP50 Series These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE5730 MJE5731 MJE5731A VCEO Vdc 300 350 375 Collector−Base Voltage MJE5730 MJE5731 MJE5731A VCB Vdc 300 350 375 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25°C VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 1.0 Adc PD 40 W 0.32 W/_C Total Device Dissipation @ TC = 25_C Derate above 25°C PD 2.0 W 0.016 W/_C Unclamped Inducting Load Energy E (See Figure 10) 20 mJ Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 3.125 62.5 Unit _C/W _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor So...