Darlington Transistor. MJE801 Datasheet

MJE801 Datasheet PDF


Part Number

MJE801

Description

NPN Epitaxial Silicon Darlington Transistor

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MJE801 Datasheet



MJE801
MJE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC
• Complement to MJE700/701/702/703
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector- Base Voltage
: MJE800/801
: MJE802/803
60
80
VCEO
Collector-Emitter Voltage
: MJE800/801
: MJE802/803
60
80
VEBO
IC
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
5
4
0.1
40
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
Equivalent Circuit
C
B
R1
R1 10k
R2 0.6k
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: MJE800/801
: MJE802/803
IC = 50mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Collector Cut-off Current
: MJE800/801
: MJE802/803
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain : MJE800/802
: MJE801/803
: ALL DEVICES
Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
Base-Emitter ON Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCB = Rated BVCEO, IE = 0
VCB = Rated BVCEO, IE = 0
TC = 100°C
VBE = 5V, IC = 0
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 1.5A, IB = 30mA
IC = 2A, IB = 40mA
IC = 4A, IB = 40mA
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
Min. Max. Units
60 V
80 V
100 µA
100 µA
100 µA
500 µA
2 mA
750
750
100
2.5 V
2.8 V
3V
2.5 V
2.5 V
3V
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001

MJE801
Typical Characteristics
5
4 IB= 450µA
IB= 400µA
IB= 350µA
3
2
1
IB= 500µA
IB= 300µA
IB= 250µA
IB= 200µA
IB= 150µA
IB= 100µA
IB= 50µA
0
012345
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
IC = 500 IB
10
VBE(sat)
1
VCE(sat)
0.1
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
MJE800/801
MJE802/803
0.1
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10000
1000
VCE = 3V
100
10
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
1000
100
f=0.1MHZ
IE=0
10
1
0.01
0.1
1
10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, February 2001




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