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MJE803 Datasheet

Part Number MJE803
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description SILICON NPN POWER DARLINGTON TRANSISTORS
Datasheet MJE803 DatasheetMJE803 Datasheet (PDF)

MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-.

  MJE803   MJE803






Part Number MJE803
Manufacturers ON
Logo ON
Description DARLINGTON POWER TRANSISTORS
Datasheet MJE803 DatasheetMJE803 Datasheet (PDF)

www.DataSheet4U.com MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2000 (Typ) @ IC • • • = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication Choice of Packages − MJE700 and MJE800 Series Pb−Free Packages are Available* .

  MJE803   MJE803







Part Number MJE803
Manufacturers Fairchild
Logo Fairchild
Description NPN Epitaxial Silicon Darlington Transistor
Datasheet MJE803 DatasheetMJE803 Datasheet (PDF)

MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector.

  MJE803   MJE803







Part Number MJE803
Manufacturers SavantIC
Logo SavantIC
Description (MJE800 - MJE803) SILICON POWER TRANSISTOR
Datasheet MJE803 DatasheetMJE803 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE800/801 VCBO Collector-base voltage MJE80.

  MJE803   MJE803







Part Number MJE803
Manufacturers Motorola
Logo Motorola
Description 4.0 AMPERE DARLINGTON POWER TRANSISTORS
Datasheet MJE803 DatasheetMJE803 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series T0220AB, MJE700T and MJE800T MAXIMUM RATINGS MJE700,T MJE702 MJE703 NPN MJE800.

  MJE803   MJE803







Part Number MJE803
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description COMPLEMENTARY POWER DARLINGTON TRANSISTORS
Datasheet MJE803 DatasheetMJE803 Datasheet (PDF)

MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current .

  MJE803   MJE803







SILICON NPN POWER DARLINGTON TRANSISTORS

MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max Operating Junction Temperature Value 80 80 5 4 0.1 40 -65 to 150 150 Unit V V V A A W o o C C For PNP types voltage and current values are negative. January 1997 1/4 MJE802-MJ803 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 3.13 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO T case = 100 o C V CE = rated V CEO V EB = 5 V I C = 50 mA IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A I C = 1.5 A f = 1 MHz I B = 40 mA I B = 30 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V 100 750 1 80 3 2.5 3 2.5 Min. Typ. Max. 100 500 100 2 Unit µA µA µA mA V V V V V I CEO I EBO Collector-Emitt.


2005-05-07 : MJ11021    MJ11021    MJ11021    MJ11022    MJ11022    MJ11028    MJ11028    MJ11028    MJ11029    MJ11029   


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