DatasheetsPDF.com

MJE8501 Datasheet

Part Number MJE8501
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet MJE8501 DatasheetMJE8501 Datasheet (PDF)

isc Silicon NPN Power Transistor MJE8501 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers.

  MJE8501   MJE8501






Part Number MJE8503A
Manufacturers Motorola
Logo Motorola
Description POWER TRANSISTORS
Datasheet MJE8501 DatasheetMJE8503A Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE8503A/D Advance Information MJE8503A* *Motorola Preferred Device SWITCHMODE™ Series NPN Bipolar Power Transistor The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Featuring • 150.

  MJE8501   MJE8501







Part Number MJE8503
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJE8501 DatasheetMJE8503 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor co.

  MJE8501   MJE8501







Part Number MJE8503
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet MJE8501 DatasheetMJE8503 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

  MJE8501   MJE8501







Part Number MJE8503
Manufacturers Motorola
Logo Motorola
Description POWER TRANSISTORS
Datasheet MJE8501 DatasheetMJE8503 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE8503A/D Advance Information MJE8503A* *Motorola Preferred Device SWITCHMODE™ Series NPN Bipolar Power Transistor The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Featuring • 150.

  MJE8501   MJE8501







Part Number MJE8502
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet MJE8501 DatasheetMJE8502 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor co.

  MJE8501   MJE8501







Silicon NPN Power Transistor

isc Silicon NPN Power Transistor MJE8501 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1400 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation@TC=25℃ 65 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature -65~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.54 UNIT ℃/W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=10mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.


2016-08-10 : KSD986    KSD985    KSD794    KSD569    KSD568    KSD560    KSD526    KSD5010    KSD5007    KSD5006   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)