isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 700V(Min) ·High Switch...
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 700V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-
voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector- Base
Voltage
1200
V
VCEO(SUS) Collector-Emitter
Voltage
700
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
8
A
PC
Collector Power Dissipation@TC=25℃
80
W
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature
-65~125 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.25
UNIT ℃/W
MJE8502
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC=10mA ; IB=0
VCE(sat)-1
Collector-Emitter Saturation
Voltage
IC= 2.5A; IB= 1A IC= 2.5A; IB= 1A,TC=100℃
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 5A; I...