isc Silicon PNP Power Transistor
MJE9780
DESCRIPTION ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 v...
isc Silicon PNP Power Transistor
MJE9780
DESCRIPTION ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 volts ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed forvertical output of 14–inch to 17–inch
televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
-200
V
VCEO Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 3.12
UNIT ℃/W
isc Website:www.iscsemi.com
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isc Silicon PNP Power Transistor
MJE9780
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -50mA ; IB= 0
-150
V
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -5mA ; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= -0.5A; IB= -50mA
-0.8
V
VBE(on) Base-Emitter On
Voltage
IC= -0.5A ; VCE= -4V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -150V ; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-10 μA
hFE 1
DC Current G...