MJH11022

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) Collector−Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21 Low Collector−Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Max 150 200 250 Unit Vdc Collector−Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Vdc 150 200 250 Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) VEB 5.0 Vdc IC 15 Adc 30 ...