INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Voltage-
: VCEO(SUS)= 450V(Min) ...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter
Voltage-
: VCEO(SUS)= 450V(Min) ·Low VCE(sat)@IC=10A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·High
voltage inverters ·Off - line power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCEV
Collector-Emitter
Voltage
850
VCEO(SUS) Collector-Emitter
Voltage
450
VEBO
Emitter-Base
Voltage
6
IC Collector Current-Continuous
15
ICM Collector Current-Peak
20
IB Base Current-Continuous
10
IBM Base Current-Peak
15
UNIT V V V A A A A
PC
Collector Power Dissipation @TC=25℃
175 W
Tj Junction Temperature Tstg Storage Temperature Range
-55~150 -55~150
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R(th)j-c Thermal Resistance,Junction to Case 1.00 ℃/W
isc Product Specification
MJH16010
isc Website：www.iscsemi.com
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