MJIRF2N65

MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65 ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω Major Ratings and Characteristics Characteristics Values Units ID 2.0 A IDM 8.0 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. ● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant Case Styles TO-220 TO-220F TO-252 TO-251 Ordering Information Part Number MCIRF2N65 MFIRF2N65 MJIRF2N65 MKIRF2N65 1、 GATE 2、 DRAIN 3、 SOURCE Package TO-220 TO-220F TO-251 TO-252 Packaging Tube Tube Tube Tube & Tape & Reel 1 of 9 MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65 Absolut...