MJIRF6N70
ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID ...
MJIRF6N70
ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 6.0 A IDM 24 A VDS 700 V
VGS TJ T storage
±30 150 -55 ~150
V
℃ ℃
POWER
MOSFET
Description/ Features The MJIRF6N70 is used an advanced termination scheme to provide enhanced
voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant
Case Styles
Ordering Information Part Number MJIRF6N70
1、 GATE 2、 DRAIN 3、 SOURCE
Package TO-251
Packaging Tube
1 of 6
MJIRF6N70
Absolute Maximum Rating (Tamb = 25℃)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Pulsed
IDM
Total Dissipation
PD
Junction Temperature...