High Power RF LDMOS FET
MK1040VP LDMOS TRANSISTOR
400W, 50V High Power RF LDMOS FETs
Description
The MK1040VP is a 400-watt, high performance, ...
Description
MK1040VP LDMOS TRANSISTOR
400W, 50V High Power RF LDMOS FETs
Description
The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies 0.5 to 1GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as UHF TV and Aerospace applications.
Typical performance(on 0.5-1GHz wideband test board with device soldered) Signal:pulse CW, pulse width:100us,duty cycle:10%,Vgs=2.99V,Vds=50V,Idq=120mA
Freq(MHz) Pin(dBm) Psat(dBm) Psat(W) IDS(A) Gain(dB) η(%)
500
43.2 57.4
550 2.36 14.2 47%
600
41.2 57.8
603 1.89 16.6 64%
700
41.7 56.5
447 1.58 14.8 57%
800
40.7 56.1
407 1.89 15.4 43%
900
40.8 56.7
468 2.067 15.9 45%
1000
40.5 56
400 1.44 15.5 56%
Typical performance(on 915MHz narrow band test board with device soldered)
Vgs=2.97V,Vds=50V, Idq=100mA Frequency 915MHz
Signal
Pin(dBm) Psat(dBm) Psat(W) IDS(A) ...
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